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BC846B

器件名称: BC846B

功能描述: Surface mount Si-Epitaxial PlanarTransistors

文件大小: 186.57KB 共2页

生产厂商: DIOTEC

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简　　介:BC 846 ... BC 850 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflchenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) BC 846 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM - IEM Tj TS 65 V 80 V 6V Grenzwerte (TA = 25/C) BC 847/850 45 V 50 V 250 mW 1) 100 mA 200 mA 200 mA 200 mA 150/C - 65…+ 150/C BC 848/849 30 V 30 V 5V Characteristics (Tj = 25/C) Group A DC current gain – Kollektor-Basis-Stromverhltnis ) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain Kleinsignal-Stromverstrkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsrückwirkung ……

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