器件名称: BC846BLT1
功能描述: General Purpose Transistors(NPN Silicon)
文件大小: 183.42KB 共4页
简 介:LESHAN RADIO COMPA N Y, LTD.
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current(Peak value) Emitter Current(Peak value) Base Current(Peak value) Symbol V CEO V CBO V EBO IC I CM I EM I BM BC846 65 80 6.0 100 200 200 200 BC847 BC850 45 50 6.0 100 200 200 200 BC848 BC849 30 30 5.0 100 200 200 200 Unit V V V mAdc mAdc mAdc mAdc
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
3
1 2
SOLDERING CHARACTERISTICS
Characteristic Solder Heat Resistance Solderability Symbol 265 240 to 265 Unit °C °C
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic Symbol Total Device Dissipation FR– 5 Board, (1) PD TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA Total Device Dissipation PD Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA Junction and Storage Temperature TJ , Tstg Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
1 BASE
3 COLLECTOR
2 EMITTER
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector–Emitter Breakdown Voltage BC846A,B (IC = 10 A, VEB = 0) BC84……
