器件名称: BC846BWT1
功能描述: General Purpose Transistors(NPN Silicon)
文件大小: 185.37KB 共4页
简 介:LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
1 BASE 3 COLLECTOR
BC846AWT1,BWT1 BC847AWT1,BWT1 CWT1 BC848AWT1,BWT1 CWT1
3
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
2 EMITTER
BC846 65 80 6.0 100
BC847 45 50 6.0 100
BC848 30 30 5.0 100
Unit V V V mAdc
1 2
CASE 419–02, STYLE 3 SOT–323 /SC–70
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD R θJA PD T J , T stg Max 150 833 2.4 –55 to +150 Unit mW °C/W mW/°C °C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 A) Emitter–Base Breakdown Voltage (IE = 1.0 A) BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series, BC848 Series V (BR)C……
