器件名称: BC846BDW1T1
功能描述: Dual General Purpose Transistors
文件大小: 106.43KB 共6页
简 介:BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is designed for low power surface mount applications. Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L
Features
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http://onsemi.com
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Q1
Q2
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PbFree Package is Available
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DIAGRAM MARKING
SOT363 CASE 419B STYLE 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc
1xm
1
1x = Specific Device Code x = B, F, L m = Date Code
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device BC846BDW1T1 BC847BDW1T1 Package SOT363 SOT363 SOT363 (PbFree) SOT363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, JunctiontoAmbient Junction and Storage Temperature Range 1. FR5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380……