器件名称: BC846BW
功能描述: NPN General Purpose Transistor
文件大小: 50.01KB 共2页
简 介:SMD Type
NPN General Purpose Transistor BC846W,BC847W,BC848W
Transistors IC
Features
Low current (max. 100 mA). Low voltage (max. 65 V).
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC846W 80 65 6 BC847W 50 45 6 100 200 200 200 150 -65 to +150 -65 to +150 625 K/W BC848W 30 30 5 Unit V V V mA mA mA mW
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SMD Type
BC846W,BC847W,BC848W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current BC846W BC847W,BC848W DC current gain BC846AW,BC847AW BC846BW,BC847BW BC847CW Collector-emitter saturation voltage VCE(sat) IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; * Base-emitter saturation voltage VBE(sat) IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA;* Base-emitter voltage Collector capacitance Transition frequency Noise figure * Pulse test: tp 300s, 0.02. VBE CC fT NF IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0;f = 1 MHz VCE = 5 V; IC = 10 mA;f = 100 MHz IC = 200 ìA; VCE = 5 V;RS = 2 k; f = 1 kHz;B = 200 Hz hFE IC = 2 mA; VCE = 5 V Symbol ICBO ICBO IEBO Testconditons VCB = 30 V; IE = 0 VCB = 30 V; IE = 0;Tj = 150 VEB = 5 V; IC = 0
Transistors IC
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