器件名称: BC846BT
功能描述: NPN Silicon AF Transistors
文件大小: 229.15KB 共9页
简 介:BC846T...BC850T
NPN Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types:
3
BC856T, BC857T, BC858T, BC859T, BC860T
2 1
VPS05996
Type BC846AT BC846BT BC847AT BC847BT BC847CT BC848AT BC848BT BC848CT BC849BT BC849CT BC850BT BC850CT
Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2cs 2Fs 2Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75
1
Aug-01-2002
BC846T...BC850T
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 109 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1)
Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IC = 10 A, IE = 0 IC = 10 A, IE = 0 BC846T BC847T/BC850T BC848T/BC849T V(BR)CBO 80 50 30 BC846T BC847T/850T BC848T/849T V(BR)CEO 65 45 30 V
RthJS
165
Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg
BC846T 65 80 80 6
BC847T BC848T BC850T BC849T 45 50 50 6 100 200 200 200 250 150 -65 ... 150 30 30 30 5
Unit V
mA mA
mW °C
K/W
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