器件名称: BC846BPDW1T1G
功能描述: Dual General Purpose Transistors
文件大小: 172.75KB 共17页
简 介:BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G Dual General Purpose Transistors
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is designed for low power surface mount applications.
Features
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http://onsemi.com
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These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS NPN
Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value 65 45 30 80 50 30 6.0 100 Unit V
Q1
Q2
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MARKING DIAGRAM
6
Collector-Base Voltage
VCBO
V 1 V mAdc
SOT363 CASE 419B STYLE 1 1
XX MG G
EmitterBase Voltage Collector Current Continuous
VEBO IC
MAXIMUM RATINGS PNP
Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value 65 45 30 80 50 30 5.0 100 Unit V
XX = Device Code M = Date Code G = PbFree Package (Note: Microdot may be in either location)
ORDERING INFORMATION
V Device Mark Package SOT363 (PbFree) SOT363 (PbFree) SOT363 (PbFree) SOT363 (PbFree) Shipping 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel
Collector-Base Voltage
VCBO
BC846BPDW1T1G BB V mAdc BC847BPDW1T1G BF BC847BPDW1T2G BF
EmitterBase Voltage Collector Current Continuous
VEBO IC
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresse……
