器件名称: BC846B-1B
功能描述: SOT23 NPN SILICON PLANAR
文件大小: 52.37KB 共3页
简 介:SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC846AZ1A BC846B1B BC847AZ1E BC847B1F BC847C1GZ BC848A1JZ BC850C-Z2G BC850B2FZ BC850 BC860 SOT23 BC849C2C BC849 BC859 BC849B2B BC848 BC858 BC848CZ1L BC847 BC857 C B BC848B1K BC846 BC856 E COMPLEMENTARY TYPES
BC846 BC848 BC850
BC847 BC849
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850
80 80 65 6
50 50 45
30 30 30 100 200 200 200 330 -55 to +150
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
BC846
VCBO VCES VCEO VEBO IC ICM IBM IEM Ptot Tj:Tstg
30 30 30 5
50 50 45
UNIT V V V V mA mA mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
BC847 BC848 BC849 BC850 15
PARAMETER SYMBOL Max Collector Cut-Off Current ICBO Max
5 Collector-Emitter Saturation Voltage VCE(sat) Typ Max. Typ Max. Typ Max. VBE(sat) Typ Base-Emitter Saturation Voltage Typ Base-Emitter Voltage VBE Min Typ Max Max 90 250 200 600 300 600 700 900 580 660 700 770
UNIT CONDITIONS. nA VCB = 30V VCB = 30V A Tamb=150°C mV IC=10mA, mV IB=0.5mA mV IC=100mA, mV IB=5mA mV IC=10mA* mV mV IC=10mA, IB=0.5mA mV IC=100mA, IB=5mA mV IC=2mA mV VCE=5V mV mV IC=10mA VCE=5V * Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the……
