器件名称: BC846B-1B
功能描述: SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
文件大小: 35.64KB 共3页
简 介:SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC846AZ1A BC846B1B BC847AZ1E BC847B1F BC847C1GZ BC848A1JZ BC848B1K BC848CZ1L BC849B2B BC849C2C BC850B2FZ BC850C-Z2G COMPLEMENTARY TYPES BC846 BC847 BC848 BC849 BC850 BC856 BC857 BC858 BC859 BC860
BC846 BC848 BC850
BC847 BC849
C B SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL Max Collector Cut-Off Current ICBO Max
VCBO VCES VCEO VEBO IC ICM IBM IEM Ptot Tj:Tstg
80 80 65 6
50 50 45
30 30 30 100 200 200 200 330 -55 to +150
30 30 30 5
50 50 45
UNIT V V V V mA mA mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
BC846 BC847 BC848 BC849 BC850 15
5 90 250 200 600 300 600 700 900 580 660 700 770
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat) Typ Max. Typ Max. Typ Max. VBE(sat) Typ Typ
Base-Emitter Voltage
VBE
Min Typ Max Max
UNIT CONDITIONS. nA VCB = 30V VCB = 30V A Tamb=150°C mV IC=10mA, mV IB=0.5mA mV IC=100mA, mV IB=5mA mV IC=10mA* mV mV IC=10mA, IB=0.5mA mV IC=100mA, IB=5mA mV IC=2mA mV VCE=5V mV mV IC=10mA VCE=5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going thr……
