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BC846B

器件名称: BC846B

功能描述: NPN Silicon AF Transistors

文件大小: 216.64KB 共8页

生产厂商: INFINEON

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简　　介:BC846...BC850 NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858 3 BC859, BC860 (PNP) 2 1 VPS05161 Type BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs 1=B B=1 B=1 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 Nov-20-2002 BC846...BC850 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 °C Junction temperature Storage temperature Thermal Resistance Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg RthJS BC846 65 80 80 6 BC847 BC850 45 50 50 6 100 200 200 200 330 150 -65 ... 150 BC848 BC849 30 30 30 5 Unit V mA mA mW °C Junction - soldering point1) Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 240 Symbol min. V(BR)CEO Values typ. max. K/W Unit Electrical Characteristics at TA = 25°C, unless otherwise specified. V 65 45 30 - BC846 BC847/850 BC848/849 Collector-base breakdown voltage IC = 10 A, IE ……

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