器件名称: BC846BDW1T1
功能描述: Dual General Purpose Transistors
文件大小: 459.88KB 共5页
简 介:Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
6
5
4
BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1
6 5 4
Q2
Q1
See Table
1
1
2
3
2 3
SOT-363 /SC-88 CASE 419B STYLE1
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous Symbol V CEO V CBO V
EBO
BC846 65 80 6.0 100
BC847 45 50 6.0 100
BC848 30 30 5.0 100
Unit V V V mAdc
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. Symbol PD Max 380 250 3.0 328 –55 to +150 Unit mW mW mW/°C °C/W °C
R θJA T J , T stg
ORDERING INFORMATION
Device BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 Package SOT–363 SOT–363 SOT–363 SOT–363 SOT–363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel
BC846b–1/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol V Min Typ Max Unit V 65 45 30 V (BR)CES 80 50 30 V
(BR)CBO
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 10 mA) BC846 Series BC847 Series BC848 Series Collector–Emitter Breakdown Voltage (I……