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BC846BDW1T1

器件名称: BC846BDW1T1
功能描述: Dual General Purpose Transistors
文件大小: 459.88KB    共5页
生产厂商: ETL
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简  介:Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 6 5 4 BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 6 5 4 Q2 Q1 See Table 1 1 2 3 2 3 SOT-363 /SC-88 CASE 419B STYLE1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous Symbol V CEO V CBO V EBO BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. Symbol PD Max 380 250 3.0 328 –55 to +150 Unit mW mW mW/°C °C/W °C R θJA T J , T stg ORDERING INFORMATION Device BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 Package SOT–363 SOT–363 SOT–363 SOT–363 SOT–363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel BC846b–1/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol V Min Typ Max Unit V 65 45 30 V (BR)CES 80 50 30 V (BR)CBO OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mA) BC846 Series BC847 Series BC848 Series Collector–Emitter Breakdown Voltage (I……
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