器件名称: BC846BW
功能描述: NPN general purpose transistors
文件大小: 50.18KB 共8页
简 介:DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC846W; BC847W NPN general purpose transistors
Product specication Supersedes data of 1997 Mar 27 1999 Apr 23
Philips Semiconductors
Product specication
NPN general purpose transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. MARKING
handbook, halfpage
BC846W; BC847W
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1
TYPE NUMBER BC846W BC846AW BC846BW BC847W Note
MARKING CODE(1) 1D 1A 1B 1H
TYPE NUMBER BC847AW BC847BW BC847CW
MARKING CODE(1) 1E 1F 1G
1 Top view 2
MAM062
2
1. = - : Made in Hong Kong. = t : Made in Malaysia.
Fig.1
Simplified outline (SC70; SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC846W BC847W VCEO collector-emitter voltage BC846W BC847W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 23 2 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base 65 65 65 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter 80 50 V V MIN. MAX. UNIT
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