器件名称: BC846BDW_08
功能描述: General Purpose Transistor
文件大小: 106.93KB 共6页
简 介:BC846BDW Series General Purpose Transistor NPN Duals
P b Lead(Pb)-Free
4 5 6 3 2 1
6 5
4
1
2
3
SOT-363(SC-88)
NPN+NPN
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics Total Device Dissipation Per Device FR-5 Board(1) TA =25 C Derate Above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD Max 380 250 3.0 RθJA TJ,Tstg 328 -55 to +150 Unit mW mW/ C C/W C
Device Marking
BC846BDW=1B, BC847BDW=1F, BC848BDW=1K, BC847CDW=1G, BC848CDW=1L
Note: FR-5=1.0- 0.75- 0.062 in
WEITRON
http://www.weitron.com.tw
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1/6
Rev.B 09-Oct-08
BC846BDW Series
Electrical Characteristics Off Characteristics
Collector-Emitter Breakdown Voltage (IC=10mAdc) BC846 BC847 BC848 Collector-Emitter Breakdown Voltage (IC=10 uAdc, VEB=0) BC846 BC847 BC848 Emitter-Base Breakdown Voltage (IC=10 uAdc) BC846 BC847 BC848 Emitter-Base Breakdown Voltage (IE=1.0 uAdc) BC846 BC847 BC848 Collector Cutoff Current (VCB=30Vdc) (VCB=30Vdc, TA =150 C) ICBO V(BR)EBO V(BR)CBO
80 50 30
(TA=25 C Unless Otherwise noted) Symbol Min Typ Max Unit
Characteristics
V(BR)CEO
65 45 30
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15 5.0
Vdc
V(BR)CES
Vdc
80 50 30
Vdc
6.0 6.0 5.0
Vdc
-
nAdc uAdc
On Characteristics
DC Current Gain (IC= 10 uAdc, VCE=5.0Vdc) (IC= 2.0 mAdc, VCE= 5.0 Vdc) Collector-Emitter S……
