器件名称: BC846BW
功能描述: NPN Silicon AF Transistors
文件大小: 229.84KB 共8页
简 介:BC846W...BC850W
NPN Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types:
3
BC856W, BC857W, BC858W BC859W, BC860W (PNP)
2 1
VSO05561
Type BC846AW BC846BW BC847AW BC847BW BC847CW BC848AW BC848BW BC848CW BC849BW BC849CW BC850BW BC850CW
Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323
1
Dec-11-2001
BC846W...BC850W
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC846W BC847W BC848W Unit BC850W BC849W 65 80 80 6 45 50 50 6 100 200 200 200 250 150 -65 ... 150 mW °C 30 30 30 5 mA mA V
Thermal Resistance Junction - soldering point 1) RthJS
Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0
BC846W BC847/850W BC848/849W
105
Values typ. max.
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Unit
V(BR)CEO
V 65 45 30 -
Collector-b……
