器件名称: BC846BMTF
功能描述: NPN Epitaxial Silicon Transistor
文件大小: 149.1KB 共5页
简 介:BC846- BC850 NPN Epitaxial Silicon Transistor
August 2006
BC846- BC850
NPN Epitaxial Silicon Transistor Features
Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 Complement to BC856 ... BC860
2 1 3
tm
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
VCBO Collector-Base Voltage
Ta = 25°C unless otherwise noted
Parameter
: BC846 : BC847/850 : BC848/849
Value
80 50 30 65 45 30 6 5 100 310 150 -65 ~ 150
Units
V V V V V V V V mA mW °C °C
VCEO
Collector-Emitter Voltage : BC846 : BC847/850 : BC848/849 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC846/847 : BC848/849/850
VEBO IC PC TJ TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF
Parameter
Collector Cut-off Current DC Current Gain
Test Condition
VCB=30V, IE=0 VCE=5V, IC=2mA
Min.
110
Typ.
Max.
15 800
Units
nA
Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC846/847/848 : BC849/850 : BC849 : BC850 IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10……
