器件名称: BC846BW
功能描述: Surface mount Si-Epitaxial PlanarTransistors
文件大小: 185.32KB 共2页
简 介:BC 846W ... BC 850W NPN
General Purpose Transistors NPN
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflchenmontage Power dissipation – Verlustleistung
2±0.1
0.3
3
200 mW SOT-323 0.01 g
1±0.1
1.25±0.1
Plastic case Kunststoffgehuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 2
1.3
Dimensions / Mae in mm 1=B 2=E 3=C
Maximum ratings (TA = 25/C)
BC 846W Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM - IEM Tj TS 65 V 80 V 6V
2.1±0.1
Grenzwerte (TA = 25/C)
BC 847W BC 850W 45 V 50 V 200 mW ) 100 mA 200 mA 200 mA 200 mA 150/C - 65…+ 150/C
1
BC 848W BC 849W 30 V 30 V 5V
Characteristics (Tj = 25/C)
Group A DC current gain – Kollektor-Basis-Stromverhltnis ) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain – Stromverstrkung hfe Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsrückwirkung
1……
