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2N7002

器件名称: 2N7002

功能描述: Small Signal MOSFET N-Channel

文件大小: 473.01KB 共4页

生产厂商: WEITRON

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简　　介:WEITRON Small Signal MOSFET N-Channel Features: *Low On-Resistance : 3 *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 7.5ns 1 GATE SOURCE 2N7002 3 DRAIN 3 1 2 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(1) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD R JA TJ, Tstg Value 60 ±20 250 1300 350 357 -55 to 150 Unit V V mA mA mW C/W C Device Marking 2N7002=7002 Note 1: Pulse Width Limited by Maximum Junction Temperature http://www.weitron.com.tw WEITRON 2N7002 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=VGS , ID=250 uA Gate-body Leakage VDS=0V, VGS=15V Zero Gate Voltage Drain Current VDS=60V, VGS=0V VDS=60V, VGS=0V, Tj=125 C On-State Drain Current (2) VGS=10V, VDS=7.5V VGS=4.5V, VDS=10V Drain-Source On-Resistance (2) VGS=10V, ID=250mA VGS=4.5V, ID=200mA Forward Transconductance (2) VDS=15V, ID=200mA Diode Forward Voltage IS=200mA, VGS=0V V(BR)DSS VGS (th) IGSS IDSS 60 1 70 1.5 2.5 100 1 500 3 4 V V nA uA - ID (on) 800 500 1300 700 1.5 2.0 300 0.85 mA mS V rDS (on) gfs VSD - 1.2 Dynamic(1) Total Gate Charge VDS=30V, VGS=10V, ID=250mA Gate-Source Charge VDS=30V, V……

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