器件名称: 2N7002V
功能描述: DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
文件大小: 87.8KB 共3页
简 介:2N7002V/VA
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 3)
D G B C A
NEW PRODUCT
SOT-563 Dim A B C D G H SEE NOTE 1
K M H
Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10
Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18
Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11
Mechanical Data
Case: SOT-563 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminals: Lead bearing terminal plating available. See Ordering information Page 2, Note 6 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate)
S2 G2 D2
K L M
L
S1 D2
All Dimensions in mm
S1 G1
G1
D1
G2
S2
D1
2N7002V (KAS Marking Code)
2N7002VA (KAY Marking Code)
Maximum Ratings
Drain-Source Voltage
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 60 60 ±20 ±40 280 1.5 150 833 -55 to +150 Units V V V mA A mW °C/W °C
Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage (Note 3) Drain Current (Note 3) Drain Current (Note 3) Total Power Dissipatio……
