器件名称: 2N7002-AE3-R
功能描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
文件大小: 148.68KB 共6页
简 介:UNISONIC TECHNOLOGIES CO., 2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2 1
MOSFET
DESCRIPTION
The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications
3
SOT-23
FEATURES
* High density cell design for low RDS(ON). * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability
*Pb-free plating product number: 2N7002L
PIN CONFIGURATION
PIN NO. PIN NAME 1 SOURCE 2 GATE 3 DRAIN
MARKING
3P
ORDERING INFORMATION Order Number Normal Lead free 2N7002-AE3-R 2N7002L-AE3-R Package SOT-23 Packing Tape Reel
www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co.,
1
QW-R206-037,B
2N7002
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)
PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS ≤1M) Gate Source Voltage Continuous Non Repetitive(tp<50s) Maximum Drain Continuous Current Pulsed Maximum Power Dissipation Derated above 25°C Operating Temperature Storage Temperature SYMBOL VDSS VDGR VGSS ID PD TOPR TSTG RATINGS 60 60 ±20 ±40 115 800 200 1.6 0 ~ +70 -40 ~ +150
MOSFET
UNIT V V V mA mW mW/°C °C
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance, Junction to Ambient ……
