器件名称: 2N7002
功能描述: N-Channel Enhancement-Mode MOS Transistor
文件大小: 24.81KB 共2页
简 介:N-Channel Enhancement-Mode MOS Transistor
CORPORATION
2N7002
DESCRIPTION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important. ORDERING INFORMATION Part 2N7002 X2N7002 Package Plastic SOT-23 Package Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC
PIN CONFIGURATION
1 2 1 DRAIN 2 SOURCE 3 GATE 1 3 3 TOP VIEW 2
S G
SOT-23 D
CD5
PRODUCT SUMMARY
V(BR)DSS (V) 60
rDS(ON) ( ) 7.5
ID (A) 0.115
PRODUCT MARKING 2N7002 V02
9-3
2N7002
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified)
SYMBOL VDS VGS ID IDM PD TJ Tstg TL PARAMETERS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Operating Junction Temperature Range Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) LIMITS 60 ±40 0.115 0.073 0.8 200 80 -55 to 150 -55 to 150 300
o
UNITS V
TEST CONDITIONS
TA = 25oC A TA = 100 oC TA = 25oC TA = 100 oC
mW
C
THERMAL RESISTANCE RATINGS
SYMBOL RthJA NOTE: THERMAL RESISTANCE Junction-to-Ambient LIMITS 625 UNITS K/W
1. Pulse width limited by maximum junction temperature.
SPECIFICATIONS1
SYMBOL STATIC V(BR)DSS VGS(th) IGSS IDSS ID(ON) Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current……
