器件名称: 2N7002W_1
功能描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
文件大小: 81.87KB 共3页
简 介:2N7002W
Lead-free Green
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4)
K G G H M S B C A D
SOT-323 Dim A B C D E G H J
Drain
Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0°
Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8°
0.65 Nominal
Mechanical Data
Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K72 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate)
J
D
E
L
K L M a
Gate
All Dimensions in mm
Source
Maximum Ratings
Drain-Source Voltage
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Pd RqJA Tj, TSTG 2N7002W 60 60 ±20 ±40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/°C K/W °C
Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1)
Total Power Dissipation (Note 1) Derating above TA = 25°C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Note: 1. Device mounted on……
