器件名称: 2N7002K
功能描述: N-Channel Enhancement Mode Power MOSFET
文件大小: 836.88KB 共6页
简 介:2N7002K
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
*
* Gate Pretection Diode
SOURCE 2
DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE
Description:
The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for all commercialindustrial applications.
3 1 2
Features:
*Simple Drive Requirement *Small Package Outline
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3,V GS @10V(TA ,V GS @10V(TA Pulsed Drain Current 1, 2 Tota l Po wer Dis s ipation(T A =25C ) Maximum Junction-ambient
3
Unless Otherwise Specified) Symbol
V DS VG S ID I DM PD R θJA TJ Tstg
ESD
Value
60 ±20 640 500 950 1.38 90 +150 -55~+150
2500
Unit
V
mA
W C/W C C
V
Operating Junction Temperature Range Storage Temperature Range
GateSource ESD Rating (HBM, Method 3015)
Device Marking
2N7002K = RK
WEITRON
http:www.weitron.com.tw
1/6
Rev.A 07-Aug-08
2N7002K
Electrical Characteristics (TA = 25°C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V G S =0, ID =250μA Gate-Source Threshold Voltage V DS =V G S , ID =250 μA Gate-Source Leakage Current V G S = ± 20 V Drain-Source Leakage Current(Tj=25C) V DS =60V,VG S =0 Drain-Source Leakage Current(Tj=70C) V DS =48V,V G S =0 Drain-Source On-Resistance V G S =10V,I D =500mA V G S =4.5V,I D =200mA Forward Tran……
