器件名称: 2N7002T-7-F
功能描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
文件大小: 447.74KB 共4页
简 介:2N7002T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability
G G H K M S B C TOP VIEW A D
NEW PRODUCT
SOT-523 Dim A B C D G H
N
Min 0.15 0.75 1.45 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0°
Max 0.30 0.85 1.75 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8°
Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50
J K L M N a
Mechanical Data
J D L
Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking: 72 (See Page 3) Ordering & Date Code Information, See Page 3 Weight: 0.002 grams (approximate)
Source Gate Drain
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Pd RqJA Tj, TSTG Value 60 60 ±20 ±40 115 73 800 150 833 -55 to +150 Units V V V mA mW °C/W °C
Characteristic
Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1)
Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Note:……
