器件名称: 2N7002
功能描述: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
文件大小: 25.02KB 共1页
简 介:SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
2N7002
S
ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO D PARTMARKING DETAIL – 702 G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range ID I DM V GS P tot T j:T stg V DS SYMBOL VALUE 60 115 800 ± 40 330 -55 to +150
SOT23 UNIT V mA mA V mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Voltage (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) V DS(on) R DS(on) g fs C iss C oss C rss t (on) t (off) 80 50 25 5 20 20 500 3.75 375 7.5 7.5 60 1 2.5 10 1 500 MAX. UNIT CONDITIONS. V V nA A A mA V mV mS pF pF pF ns ns V DD ≈ 30V, I D=200mA R g=25 , R L=150 (1) Measured under pulsed conditions. Width=300s. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device V DS=25V, V GS=0V, f=1MHz I D=10 A, V GS=0V I D =250mA, V DS= V GS V GS= ± 2……
