器件名称: 2N7002W
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 266.34KB 共6页
简 介:2N7002W — N-Channel Enhancement Mode Field Effect Transistor
October 2007
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
D
S G
SOT - 323
Marking : 2N
Absolute Maximum Ratings *
Symbol
VDSS VDGR VGSS ID Drain-Source Voltage
Ta = 25°C unless otherwise noted
Parameter
Drain-Gate Voltage RGS ≤ 1.0M Gate-Source Voltage Drain Current Continuous Pulsed Continuous Continuous @ 100°C Pulsed
Value
60 60 ±20 ±40 115 73 800 -55 to +150
Units
V V V
mA °C
TJ , TSTG
Junction and Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
PD RθJA
Parameter
Total Device Dissipation Derating above TA = 25°C Thermal Resistance, Junction to Ambient *
Value
200 1.6 625
Units
mW mW/°C °C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
2007 Fairchild Semiconductor Corporation 2N7002W Rev. A 1
www.fairchildsemi.com
2N7002W — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
Symbol Parameter Off Characteristics (Note1)
BVDSS IDSS IGSS
TC = 25°C unless otherwise noted
Test Condition
MIN
TYP
MAX
Units
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
VGS= 0V, ID=10uA VD……
