器件名称: 2N7002MTF_01
功能描述: N-Channel Small Signal MOSFET
文件大小: 116.48KB 共5页
简 介:N-Channel Small Signal MOSFET
FEATURES
! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability
2N7002MTF
BVDSS = 60 V RDS(on) = 5.0 ID = 200 mA
SOT-23
Product Summary
Part Number 2N7002 BVDSS 60V RDS(on) 5.0 ID 115mA
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range
①
Value 60 115 73 800 ±20 0.2 1.6 - 55 to +150
Units V mA mA V W mW/℃ ℃
Thermal Resistance
Symbol RθJA Characteristic Junction-to-Ambient Typ. -Max. 625 Units ℃/W
Rev. C1
2N7002MTF
Symbol BVDSS VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Min. 60 1.2 IDSS ID(ON) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance ② 0.5 0.08 500 5.0 50 25 5 20 20 ns pF A S Typ. -
N-Channel Small Signal MOSFET
Electrical Characteristics (TC=25℃ unless otherwise specified)
Max. Units 2.5 100 nA -100 1.0 A V V Test Condition VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 20V VGS = -20V VGS = 40V VGS = 40V, TC = 125℃ VDS = 10V, VGS = ……
