器件名称: 2N7002V
功能描述: N-Channel MOSFET
文件大小: 315.18KB 共2页
简 介:MCC
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2N7002V
Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
Symbol VDSS VDGR VGSS ID PD RθJA TJ TSTG Rating Drain-source Voltage Drain-Gate Voltage Gate-source Voltage Drain Current Total Power Dissipation Thermal Resistance Junction to Ambient Operating Junction Temperature Storage Temperature Rating 60 60 ±20 280 150 833 -55 to +150 -55 to +150 Unit V V V mA mW ℃/W ℃ ℃ Max --2.5 ±0.1 1 500 --3.0 2.0 --50 25 5 Units Vdc Vdc Adc Adc
DIMENSIONS
N-Channel MOSFET
Maximum Ratings @ 25OC Unless Otherwise Specified
SOT-563
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol V(BR)DSS Vth(GS) IGSS IDSS Parameter Drain-Source Breakdown Voltage* (VGS=0Vdc, ID=10Adc) Gate-Threshold Voltage* (VDS=VGS, ID=250Adc) Gate-body Leakage* (VDS =0Vdc, VGS =±20Vdc) Zero Gate Voltage Drain Current* (VDS =60Vdc, VGS =0Vdc) (VDS =0Vdc, VGS =±20Vdc, Tj=125℃) On-state Drain Current* (VDS =7.5Vdc, VGS =10Vdc) Drain-Source On-Resistance* (VGS=5Vdc, ID=50mAdc) (VGS=10Vdc, ID=500mAdc) Forward Tran Conductance* (VDS=10Vdc, ID=200mAdc) Input Capacitance VDS=25Vdc, Output Capacitance VGS =0Vdc Reverse Transfer f=1MHz Capacitance Min 60 1.0 ------0.5 ----80 ------Typ 70 --------1.0 -------------
ID(ON) rDS(on)
Adc ms
DIM A B C D G H K L M
INCHES MIN .006 .043 .061 .020 .035 .059 .022 .004 .004 .043 .067 .023 .011 .007 0.90 1.50 0.56 0.10 0.10 MAX .01……
