器件名称: 2N7002E
功能描述: N-Channel 60-V (D-S) MOSFET
文件大小: 85.19KB 共5页
简 介:2N7002E
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
rDS(on) (W)
3 @ VGS = 10 V
ID (mA)
240
FEATURES
D D D D D Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays
TO-236 (SOT-23)
Marking Code: 7Ewl G 1 3 S 2 D E = Part Number Code for 2N7002E w = Week Code l = Lot Traceability
Top View Ordering Information: 2N7002E-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM PD RthJA TJ, Tstg
Limit
60 "20 240 190 1300 0.35 0.22 357 -55 to 150
Unit
V
mA
W _C/W _C
Notes a. Pulse width limited by maximum junction temperature. Document Number: 70860 S-31987—Rev. D, 13-Oct-03 www.vishay.com
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2N7002E
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate ……
