器件名称: 2N7002W
功能描述: N-Channel MOSFET
文件大小: 104.72KB 共4页
简 介:2N7002W
N-Channel MOSFET
3 DRAIN
3
Features:
*Low On-Resistance : 7.5 *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V(TYE) *Fast Switching Speed : 7ns
1 GATE 2
SOURCE
1 2
SOT-323(SC-70)
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID PD R θJA TJ, Tstg Value 60 ±20 115 200 625 -55 to 150 Unit V V mA mW C/W C
Device Marking
2N7002W=K72
WEITRON
http://www.weitron.com.tw
2N7002W
Electrical Characteristics
Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit
Static (1)
Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=V GS , ID =-250uA Gate-body Leakage +20V, VDS=0V VGS= _ Zero Gate Voltage Drain Current VDS=60V, VGS=0V @ Tc=25 C VDS=60V, VGS=0V @ Tc=125 C On-State Drain Current VGS=10V, VDS=7.5V Drain-Source On-Resistance VGS=5V, ID=0.05A @ Tj=25 C VGS=10V, ID=0.5A @ Tj =125 C Forward Transconductance VDS=10V, ID=0.2A V(BR)DSS VGS (th) IGSS IDSS ID (on) 60 1.0 70 1.5 1.0 3.2 4.4 2.0 + _ 10 1.0 500 V V nA uA A
0.5
RDS (on)
gfs
80
7.5 13.5
-
-
mS
Dynamic
Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss Coss Crss
-
22 11 2.0
50 25 5.0 PF
Switching
Turn-On Time VDD=30V, RL=150……
