器件名称: 1N5819
功能描述: Schottky Barrier Rectifiers
文件大小: 157.09KB 共2页
简 介:MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150J Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O
1N5817 Thru 1N5819
SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 20-40 VOLTS
DO-41
MAXIMUM RATINGS
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half-wave, single phase,60Hz ) Operating and Storage Junction Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM 1N5817 20 1N5818 30 1N5819 40 Unit V
14
21 1.0
28
V A
MILLIMETERS MIN A 2.00 25.40 4.10 0.70 MAX 2.70 --5.20 0.90
25
A
DIM
TJ , TSTG
-65 to +150
J
B C D
ELECTRIAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (IF =1.0 Amp) (IF =3.0 Amp) Maximum Instantaneous Reverse Current (Rated DC Voltage, TC = 25J ) (Rated DC Voltage, TC = 125J ) Typical Junction Cap……
