器件名称: 1N5819-TB
功能描述: 1.0A SCHOTTKY BARRIER DIODE
文件大小: 47.27KB 共4页
简 介:WTE
POWER SEMICONDUCTORS
1N5817 – 1N5819
Pb
1.0A SCHOTTKY BARRIER DIODE
Features
! ! Schottky Barrier Chip Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications D
A
C
Mechanical Data
! ! ! ! ! ! ! Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.34 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4
DO-41 Dim Min Max 25.4 — A 4.06 5.21 B 0.71 0.864 C 2.00 2.72 D All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TL = 90°C Symbol VRRM VRWM VR VR(RMS) IO IFSM
@TA=25°C unless otherwise specified
1N5817 20 14
1N5818 30 21 1.0 25
1N5819 40 28
Unit V V A A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Lead (Note 1) Operating and……
