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1N5819G

器件名称: 1N5819G
功能描述: Axial Lead Rectifiers
文件大小: 75.98KB    共7页
生产厂商: ONSEMI
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简  介:1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity protection diodes. Features http://onsemi.com Extremely Low VF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are PbFree Devices* SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds Polarity: Cathode Indicated by Polarity Band ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) AXIAL LEAD CASE 59 STYLE 1 MARKING DIAGRAM A 1N581x YYWWG G A =Assembly Location 1N581x =Device Number x= 7, 8, or 9 YY =Year WW =Work Week G =PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. S……
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