器件名称: 1N5819-1_08
功能描述: HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE
文件大小: 59.46KB 共3页
简 介:1N5819-1 1N5819UR-1
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 193, REV. C
JAN JANTX JANTXV
HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. MAXIMUM RATINGS RATING Peak Inverse Voltage (PIV) Average DC Output Current (Io) Peak Single Cycle Surge Current (Ifsm) ← ↑ tp = 8.3 ms Single Half Cycle Sine Wave, Superimposed On Rated Load Junction to Lead d = 0.375” Junction to Endcap CONDITIONS All ratings are at TA = 25oC unless otherwise specified. MIN TYP MAX 45 1.0 25 UNIT Vdc Amps Amps(pk)
Thermal Resistance (θJL) Thermal Resistance (θJEC) Junction Temperature (TJ) Operating Temperature (Top) Storage Temp. (Tstg)
-55 -55 -55
-
70 40 +125 +125 +150
°C/W °C/W °C °C °C
ELECTRICAL CHARACTERISTICS CHARACTERISTIC Maximum Forward Voltage (Vf) Maximum Instantaneous Reverse Current At Rated (PIV) Junction Capacitance (CJ) CONDITIONS IF = 1.0A (300 sec pulse, duty cycle < 2%) TA = 25° C TA = 100° C VR = 5 Vdc 0.01 ≤ f ≤ 1MHz Vsig = 15 mV p-p MIN TYP MAX 0.49 UNIT Volts
-
-
0.05 4.0
Amps mAmps
-
-
70
pF
Notes:
- All ratings are at TA = 25°C unless otherwise specified. - Maximum storage temperature range: -55°C to +150°C. - Maximum operating temperature range: -55°C to +125°C (1N5819-1, 1N5819UR-1). ← Derate linearly at 4.5 V/°C above TL or TEC = +100°C (1N5819-1), where TEC is at L = .375 inch. ↑ Derate linearly at 14 mA/°C above TL or TEC = +55°C (1N5819-1), where TEC is at L = .3……
