器件名称: 1N5819WB
功能描述: SCHOTTKY BARRIER DIODES
文件大小: 47.54KB 共1页
简 介:Certificate TH97/10561QM
Certificate TW00/17276EM
1N5817WB - 1N5819WB
PRV : 20 - 40 Volts IO : 1.0 Ampere
MECHANICAL DATA :
* Case : SOD-123 * Weight : 0.01 gram (approximately) * 1N5817WB Marking Code : A0 * 1N5818WB Marking Code : ME * 1N5819WB Marking Code : SR
SCHOTTKY BARRIER DIODES
SOD-123
0.6 0.5 0.135 0.127 3.9 3.7 2.7 2.6
Absolute Maximum Rating
Parameter
DC Reverse Voltage
(Ta = 25 °C)
Symbol
1N5817WB 1N5818WB 1N5819WB VR IO Ptot TJ TSTG
1.15 1.05
1.65 1.55
Dimensions in millimeters
Value
20 30 40 1.0 450 -55 to + 150 -55 to + 150
Unit
V A mW °C °C
Average Rectified Output Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Electrical Characteristics
Parameter
Reverse Breakdown Voltage at I R = 1 mA Reverse Leakage Current
(Ta = 25 °C )
Symbol
1N5817WB 1N5818WB 1N5819WB at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V 1N5817WB 1N5818WB 1N5819WB 1N5819WB 1N5819WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB at I F = 3.0 A 1N5817WB 1N5818WB 1N5819WB VF IR VBR
Min 20 30 40 -
Typ -
Max 1 1 1 0.050 0.075 0.45 0.45 0.55 0.60 0.750 0.875 0.900 120
Unit V
mA
Forward Voltage
at I F = 0.1 A at I F = 1.0 A
V
Diode Capacitance at VR = 4 V, f = 1MHz Page 1 of 1
CD
-
pF
Rev. 01 : August 22, 2006
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