器件名称: 1N5819
功能描述: SCHOTTKY BARRIER RECTIFIERS
文件大小: 190.87KB 共2页
简 介:1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIERS
Features Metal silicon junction, majority carrier conduction Guarding for overvoltage protection Low power loss, high efficiency High current capability low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data Case: Molded plastic, DO-41
Dimensions in mm
Maximum Ratings and Electrical Characteristics Ratings at 25 OC ambient temperature unless otherwise specified.
Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at TL = 90 OC Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70 OC Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Forward Voltage at 3.1 A Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage Typical Thermal Resistance Typical Junction Capacitance Storage and Operating Junction Temperature Range TA = 25 OC TA = 100 OC Symbols VRRM VRMS VDC I(AV) IFSM VF IR RθJA RθJL CJ Tj ,Tstg 0.45 0.75 1N5817 20 14 20 1N5818 30 21 30 1 25 0.55 0.875 1 10 50 15 110 - 65 to + 125
O
1N5819 40 28 40
Units V V V A A
0.6 0.9
V mA C/W pF
O
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 11/11/2008
1N58……
