器件名称: 1N5819-1
功能描述: HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER
文件大小: 88.5KB 共3页
简 介:SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 193, REV. B
1N5819-1 1N5819UR-1 JAN JANTX JANTXV
HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. MAXIMUM RATINGS RATING Peak Inverse Voltage (PIV) Average DC Output Current (Io) Peak Single Cycle Surge Current (Ifsm) tp = 8.3 ms Single Half Cycle Sine Wave, Superimposed On Rated Load Junction to Lead d = 0.375” Junction to Endcap CONDITIONS All ratings are at TA = 25 C unless otherwise specified. MIN TYP MAX 45 1.0 25 UNIT Vdc Amps Amps(pk)
o
Thermal Resistance ( JL)
-55 -55 -55
-
70 40 +125 +125 +150
C/W C/W C C C
Thermal Resistance (qJEC) Junction Temperature (TJ) Operating Temperature (Top) Storage Temp. (Tstg)
ELECTRICAL CHARACTERISTICS CHARACTERISTIC Maximum Forward Voltage (Vf) Maximum Instantaneous Reverse Current At Rated (PIV) Junction Capacitance (CJ) CONDITIONS IF = 1.0A (300 msec pulse, duty cycle < 2%) TA = 25 C TA = 100 C VR = 5 Vdc 0.01 f 1MHz Vsig = 15 mV p-p
MIN -
TYP -
MAX 0.49
UNIT Volts
-
-
0.05 4.0
mAmps mAmps
-
-
70
pF
Notes: - All ratings are at TA = 25 C unless otherwise specified.
- Maximum storage temperature range: -55 C to +150 C. - Maximum operating temperature range: -55 C to +125 C (1N5819-1, 1N5819UR-1). Derate linearly at 4.5 V/ C above TL or TEC = +100 C (1N5819-1), where TEC is at L = .375 inch.
Derate linearly at 14 mA/ C above TL or TEC = +55 C (1N5819-1), where TEC is……
