器件名称: 1N5819W
功能描述: SURFACE MOUNT SCHOTTKY BARRIER DIODE
文件大小: 125.45KB 共1页
简 介:Certificate TH97/10561QM
Certificate TW00/17276EM
1N5819W
FEATURES :
* * * * * * Low Power Loss, Low Forward Voltage Drop High Efficiency High Surge Capability High Current Capability Pb / RoHS Free
SURFACE MOUNT SCHOTTKY BARRIER DIODE SOD-123
0.6 0.5 0.135 0.127 3.9 37 2.7 2.6 1.65 1.55
* * * *
Case: SOD-123, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.01 grams (approx.)
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage at I R = 1 mA Maximum DC Blocking Voltage Maximum RMS Reverse Voltage Maximum Average Forward Current Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Power Dissipation Typical Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range
Symbol
VRRM VRWM VR VR(RMS) IF IFSM Ptot RJA TJ TSTG
(Ta = 25 °C)
1.15 1.05
MECHANICAL DATA :
Dimensions in millimeters
Value
40 40 40 28 1 25.0 450 222 125 -55 to + 125
Unit
V V V V A A mW °C/W °C °C
Electrical Characteristics
Parameter
Reverse Breakdown Voltage Forward Voltage (Note 1)
Symbol
V(BR)R VF
Test Condition
IR = 1.0 mA IF = 0.1 A IF = 1.0 A IF = 3.0 A VR = 40 V VR = 40 V, Ta = 100 °C VR = 4 V VR = 4 V, Ta = 100 °C VR = 6 V VR = 6 V, Ta = 100 °C
Min. 40 -
Typ. 10.0 1.0 15.0 1.5 110
Max. 0.32 0.45 0.75 1 10.0 50.0 2.0 75.0 3.0 -
Unit V V mA mA μA mA μA mA pF
Reverse Leakage Current (Note 1)……
