器件名称: 1N5819WB
功能描述: 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE
文件大小: 135.91KB 共2页
简 介:1N5817WB-1N5819WB
1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
1
Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range 1N5817WB 1N5818WB 1N5819WB
Symbol VR IO IFSM Ptot Tj TS
Value 20 30 40 1 25 450 - 55 to + 150 - 55 to + 150
Unit V A A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Reverse Breakdown Voltage at IR = 1 mA 1N5817WB 1N5818WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB 1N5819WB 1N5819WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB CD Symbol VBR Min. 20 30 40 Max. 1 1 1 0.05 0.075 0.45 0.45 0.55 0.6 0.75 0.875 0.9 120 pF Unit V
Reverse Voltage Leakage Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.1 A at IF = 1 A
IR
mA
VF
V
at IF = 3 A
Diode Capacitance at VR = 4 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/12/2006
1N5817WB-1N5819WB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-123
∠ ALL ROUND
c
HE
D
A
E
bp
A
UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.127 D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 v 0.2
∠
5
O
SEMTECH ……