器件名称: 1N5819
功能描述: 1.0 Ampere Schottky Barrier Rectifiers
文件大小: 36.22KB 共2页
简 介:1N5817-1N5819
Discrete POWER & Signal Technologies
1N5817 - 1N5819
Features
1.0 ampere operation at TA = 90°C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
1.0 min (25.4)
Dimensions in inches (mm)
0.205 (5.21) 0.160 (4.06)
DO-41
COLOR BAND DENOTES CATHODE
0.107 (2.72) 0.080 (2.03) 0.034 (0.86) 0.028 (0.71)
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
IO if(surge) PD RθJA Tstg TJ
TA = 25°C unless otherwise noted
Parameter
Average Rectified Current .375 " lead length @ TA = 90°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Storage Temperature Range Operating Junction Temperature
Value
1.0
Units
A
25 1.25 12.5 80 -65 to +125 -65 to +125
A W mW/°C °C/W °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
TA = 25°C unless otherwise noted
Device
1N5817 1N5818 30 21 30 0.5 10 550 875 110 1N5819 40 28 40 20 14 20
Units
V V V mA mA mV mV pF
Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) TA = 25°C TA = 100°C @ 1.0 A @ 3.0 A Maximum Reverse Current @ rated VR Maximum Forward Voltage Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz
450 750
600 900
1998 Fairchild Semiconductor Corporation
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