器件名称: B772
功能描述: Plastic-Encapsulated Transistors
文件大小: 63.69KB 共1页
简 介:Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
6. 5 0 0. 10 2 . 30 0. 05 0. 5 1 0 . 03
B772
FEATURES
TRANSISTOR (PNP)
14. 70
5
5
0. 80 0. 0 5 0. 6 0 0. 0 5
1.
Power dissipation PCM: 1.25 W(Tamb=25℃)
2. 3.
BASE
2. 3 0 0. 05
2. 3 0 0. 0 5
1 . 20
0. 51 0 . 03
123
COLLECTOR
. 10 0. 75 0
6. 50 0 . 15 5. 30 0. 10 0. 51 0 . 05 2. 30 0 . 10
7. 70
. 10 5. 50 0
TO-251 TO-252-2
5. 3 0 0. 05
5
Collector current ICM: -3 A Collector-base voltage V(BR)CBO: - 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE (sat) VBE(sat) fT
. 20 9. 70 0
0. 51 0 . 10 0 0 . 10 5
5
. 15 1. 60 0
2. 30 0. 10
0. 60 0. 10 2. 30 0 . 10 0. 51
123
unless otherwise specified)
Test conditions MIN -40 -30 -6 -1 -10 -1 60 32 -0.5 -1.5 50 V V MHz 400 TYP MAX UNIT V V V A A A
Ic= -100A, IE=0 Ic= -10mA, IB=0 IE= -100A, IC=0 VCB= -40V, IE=0 VCE= -30V, IB=0 VEB= -6V, IC=0 VCE= -2V, IC= -1A VCE= -2V, IC= -100mA IC= -2A, IB= -0.2 A IC= -2A, IB= -0.2 A VCE= -5V, Ic=-0.1A f =10MHz
CLASSIFICATION OF hFE (1)
Rank Range R 60-120 O 100-……
