器件名称: B772
功能描述: Audio Frequency Power Amplifier
文件大小: 76.74KB 共5页
简 介:KSB772
KSB772
Audio Frequency Power Amplifier
Low Speed Switching Complement to KSD882
1
TO-126 2.Collector 3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC Rθja Rθjc TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction to Ambient Junction to Case Junction Temperature Storage Temperature Value - 40 - 30 -5 -3 -7 - 0.6 10 1 132 13.5 150 - 55 ~ 150 Units V V V A A A W W °C/W °C/W °C °C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = - 30V, IE = 0 VEB = - 3V, IC = 0 VCE = - 2V, IC = - 20mA VCE = - 2V, IC = - 1A IC = - 2A, IB = - 0.2A IC = - 2A, IB = - 0.2A VCE = - 5V, IE = - 0.1A VCB = - 10V, IE = 0 f = 1MHz 30 60 220 160 - 0.3 - 1.0 80 55 Min. Typ. Max. -1 -1 400 - 0.5 - 2.0 V V MHz pF Units A A
* Pulse Test: PW≤350s, Duty Cycle≤2%
hFE Classificntion
Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400
2002 Fairchild Semiconductor Corporation
Rev. B, October 2002
KSB772
Typical Ch……
