器件名称: B772
功能描述: PNP Type Plastic Encapsulate Transistors
文件大小: 384.72KB 共2页
简 介:B772
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
PNP Type
Plastic Encapsulate Transistors
TO-126
Features
* Low speed switching
10.8±0.2
O 3.1± 0.1
7.6±0.2 1.3±0.2 4.0±0.1
2.7±0.2
MAXIMUM RATINGS* TA=25 C unless otherwise noted
o
1
2
3
2.2±0.1 1.27±0.1 15.5±0.2
0.76 ±0.1
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature
Value -40 -30 -6 -3 1.25 150 -55-150
Units V V V A W
o
2.29 Typ. 4.58±0.1 0.5±0.1
C C
o
1: Emitter 2: Collector 3: Base
Dimens ions in Millimeters
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE（1） VCE(sat) VBE(sat)
unless
Test
otherwise
specified）
TYP MAX UNIT V V V -1 -10 -1 60 400 -0.5 -1.5 80 V V MHz μA μA μA -40 -30 -6
conditions IB=0
MIN
Ic=-100μA ，IE=0 IC= -10 mA , IE= -100 μA，IC=0 VCB= -40 V , IE=0 VCE=-30 V , IB=0 VEB=-6V , IC=0
VCE= -2V, IC= -1A IC=-2A, IC=-2A, IB= -0.2A IB= -0.2A IC=-0.1A
fT
VCE= -5V,
f = 10MHz
CLASSIFICATION OF hFE(1)
Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400……
