器件名称: B772
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 41.73KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 1/4
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .................................................................................... 1.4 W Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................... -40 V BVCEO Collector to Emitter Voltage................................................................................... -30 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current (DC) ..................................................................................................... -3 A IC Collector Current (Pulse) ......................................……