器件名称: B772-SOT-89
功能描述: TRANSISTOR (PNP)
文件大小: 34.25KB 共1页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
B772
FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLETOR 3. EMITTER 1 2 3
TRANSISTOR (PNP)
SOT-89
1. BASE
Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ CLASSIFICATION OF hFE(1)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=-2V, IC= -100mA IC=-2A, IB= -0.2A IC=-2A, IB= -0.2A VCE= -5V, Transition frequency
C=-0.1A
unless otherwise specified)
Test
conditions
MIN -40 -30 -6
TYP
MAX
UNIT V V V
Ic=-100A , IE=0 IC= -10 mA , IB=0 IE= -100 A, IC=0 VCB= -40 V, IE=0 VCE=-30 V, IB=0 VEB=-6V, IC=0 VCE= -2V, IC= -1A
-1 -10 -1 60 32 -0.5 -1.5 400
A A A
V V
fT f = 10MHz
50
MHz
CLASSIFICATION OF hFE(1)
Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400
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