器件名称: 2N3771
功能描述: High Power NPN Silicon Power Transistors
文件大小: 86.27KB 共5页
简 介:2N3771, 2N3772
2N3771 is a Preferred Device
High Power NPN Silicon Power Transistors
These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
Features http://onsemi.com
Forward Biased Second Breakdown Current Capability
MAXIMUM RATINGS (Note 1)
Rating Symbol VCEO VCEX VCB VEB IC IB 2N3771 40 50 50 2N3772 60 80 Unit Vdc Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 100 7.0 20 30 5.0 30 30 Collector Current Continuous Peak Base Current Continuous Peak 7.5 15 5.0 15 Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 150 0.855 W W/°C °C TJ, Tstg – 65 to + 200
IS/b = 3.75 Adc @ VCE = 40 Vdc 2N3771 = 2.5 Adc @ VCE = 60 Vdc 2N3772 PbFree Packages are Available*
20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS
MARKING DIAGRAM
TO204AA (TO3) CASE 107 STYLE 1
2N377xG AYYWW MEX
2N377x G A YY WW MEX
THERMAL CHARACTERISTICS
Characteristic
Symbol qJC
Max
Unit
Thermal Resistance, JunctiontoCase
1.17
°C/W
= Device Code x = 1 or 2 = PbFree Package = Assembly Location = Year = Work Week = Country of Origin
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended expos……
