器件名称: 2N3771_00
功能描述: HIGH POWER NPN SILICON TRANSISTOR
文件大小: 46.27KB 共4页
简 介:
2N3771 2N3772
HIGH POWER NPN SILICON TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.
1 2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEO V CEV V CBO V EBO IC I CM IB I BM P tot T stg Parameter 2N3771 Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Base Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c ≤ 25 o C Storage Temperature 40 50 50 5 30 30 7.5 15 150 -65 to 200 Value 2N3772 60 80 100 7 20 30 5 15 V V V V A A A A W
o
Unit
C
December 2000
1/4
2N3771/2N3772
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions for 2N3771 V CB = 50 V for 2N3772 V CB = 100 V for all V CB = 30 V T j = 150 o C for 2N3771 for 2N3772 for 2N3771 for 2N3772 for 2N3771 for 2N3772 I C = 0.2 A for 2N3771 for 2N3772 R BE = 100 I C = 0.2 A for 2N3771 for 2N3772 I C = 0.2 A for 2N3771 for 2N3772 for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A I B = 1.5……
