器件名称: 2N3771
功能描述: NPN HIGH POWER SILICON TRANSISTOR
文件大小: 67.51KB 共2页
简 介:TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518 Devices 2N3771 2N3772 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg
2N3771
40 50 7.0 7.5 30
2N3772
60 100 7.0 5.0 20
Unit
Vdc Vdc Vdc Adc Adc W W 0 C
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 34.2 mW/ C for TA > +25 C 2) Derate linearly 857 mW/0C for TC > +250C
0 0
6.0 150 -65 to +200
TO-3* (TO-204AA)
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBE = 100 Collector-Emitter Breakdown Voltage IC = 200 mAdc, VBE = -1.5 Vdc Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 50 Vdc Emitter-Base Cutoff Current VBE = 7.0 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 50 Vdc VBE = 1.5 Vdc, VCE = 100 Vdc 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 V(BR)CEO 40 60 45 70 50 90 5.0 5.0 2.0 Vdc
V(BR)CER
Vdc
V(BR)CEX
Vdc
ICEO
mAdc
IEBO
mAdc
ICEX
500 500
Adc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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2N3771, 2N3772 JAN SERIES
ELECTRICAL CHAR……
