器件名称: 2N3771
功能描述: POWER TRANSISTORS (NPN SILICON)
文件大小: 204.37KB 共6页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3771/D
High Power NPN Silicon Power Transistors
2N3771* 2N3772
*Motorola Preferred Device
Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc — 2N3771 IS/b = 2.5 Adc @ VCE = 60 Vdc — 2N3772 *MAXIMUM RATINGS
Rating Symbol VCEO VCEX VCB VEB IC IB 2N3771 40 50 50 2N3772 60 80 Unit Vdc Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 100 7.0 20 30 5.0 30 30 Collector Current — Continuous Peak Base Current — Continuous Peak 7.5 15 5.0 15 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 150 0.855 Watts W/_C TJ, Tstg – 65 to + 200
. . . designed for linear amplifiers, series pass regulators, and inductive switching applications.
20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS
CASE 1–07 TO–204AA (TO–3)
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol θJC
2N3771, 2N3772 1.17
Unit
Thermal Resistance, Junction to Case
_C/W
* Indicates JEDEC Registered Data.
200 PD, POWER DISSIPATION (WATTS) 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995 Motorola Bipolar……
