器件名称: 2N3771
功能描述: isc Silicon NPN Power Transistor
文件大小: 169.72KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION Excellent Safe Operating Area High DC Current Gain-hFE=15(Min)@IC = 15A Low Saturation Voltage: VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEX VCEO VEBO IC ICM IB IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak VALUE 50 50 40 UNIT V
2N3771
Base Current-Continuous Base Current-Peak
Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
w
ww
s c s .i
5 30 30 7.5 15 150 200 -65~200
n c . i m e
V V V A A A A
W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCER(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage CONDITIONS IC= 200mA ; IB= 0 IC= 200mA ; VBE(off)= 1.5V; RBE=100Ω IC= 200mA ; RBE= 100Ω IC= 15A; IB= 1.5A IC= 30A; IB= 6A IC= 15A ; VCE= 4V MIN 40 50 45
2N3771
MAX
UNIT V V V
VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT
Collector-Emi……
