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2N3442

器件名称: 2N3442
功能描述: HIGH POWER INDUSTRIAL TRANSISTORS
文件大小: 188.53KB    共3页
生产厂商: ETC
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简  介:2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347 Collector-Emitter Sustaining VoltageVCEO(sus) = 120 Vdc (Min) – 2N4347 140 Vdc (Min) – 2N3442 Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCB VEB Ratings #Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 Value 120 140 140 160 7.0 5.0 10 10 15 (**) 3.0 7.0 8.0 100 117 0.57 0.67 -65 to +200 Unit V Vdc Vdc IC Collector Current Peak Continuous Adc IB Base Current Peak Total Device Dissipation @ TC = 25° Derate above 25° Junction Temperature Storage Temperature Adc PD Watts W/°C °C °C TJ TS (**) This data guaranteed in addition to JEDEC registered data. COMSET SEMICONDUCTORS 1/3 2N3442 2N4347 THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N4347 2N3442 Value 1.75 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) Ratings Collector-Emitter Sustaining Voltage (1) Test Condition(s) IC=200 mAdc, IB=0 Min Typ Mx Unit 2N4347 120 2N3442 140 Vdc V 200 mAdc 20……
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